MJE18004 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE18004
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
4
A
PD
Total Power Dissipation@TC=25℃
100
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance,Junction to Case
1.25 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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