MJE172G Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE172G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-1.5A ;IB= -0.15 A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -3A ;IB=-0.6 A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -1.5A; IB= -0.15A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -3A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -1V; IC= -0.5A
VCB= -100V; IE= 0
VCB= -100V; IE= 0;TC= 150℃
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.1 A ; VCE= -1V
hFE-2
DC Current Gain
IC= -0.5A ; VCE= -1V
hFE-3
DC Current Gain
IC= -1.5 A ; VCE= -1V
fT
Current-Gain—Bandwidth Product IC= -0.1 A; VCE= -10V;
COB
Output Capacitance
IE= 0; VCB= -10V;ftest= 0.1MHz
G:Pb-Free Package
MIN MAX UNIT
-80
V
-0.3
V
-0.9
V
-1.7
V
-1.5
V
-2.0
V
-1.2
V
-0.1
μA
-0.1
mA
-0.1
μA
50
250
30
12
30
MHz
30
pF
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