MJE172G Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE172G
DESCRIPTION
·Collector–Emitter Sustaining Voltage—: VCEO(SUS) = -80 V
·DC Current Gain—
: hFE = 30(Min) @ IC= -0.5 A
= 12(Min) @ IC= -1.5 A
·Complement to the NPN MJE182G
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Low power audio amplifier
·Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-peak
-6
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
-1
A
1.5
W
12.5
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W
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