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MJE1320 Datasheet, PDF (2/3 Pages) Motorola, Inc – POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE1320
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0.
VCEsat-1
Collector-emitter saturation voltage
IC=1A ;IB=0.5A
TC=100
VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=1A
VBEsat-1 Base-emitter saturation voltage
IC=1A ;IB=0.5A
TC=100
VBEsat-2 Base-emitter saturation voltage
IC=2A ;IB=1A
ICEV
Collector cut-off current
VCEV=RatedValue;VBE(off)=1.5V
TC=100
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
COB
Collector outoput capacitance
IE=0 ; VCB=10V;f=1.0MHz
Switching times resistive load,Duty Cycle 2%,tp=25 s
td
Delay time
tr
Rise time
ts
Storage time
VCC=250V; IC=1A
IB1=IB2=0.5A
tf
Fall time
MIN TYP. MAX UNIT
900
V
0.18 1.0
0.3 1.5
V
0.3 2.5
V
0.2 1.5
0.15 1.5
V
0.9 2.8
V
0.25
2.5
mA
0.25 mA
2.5
3
80
pF
0.1
s
0.8
s
4.0
s
0.8
s
2
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