MJE1320 Datasheet, PDF (1/3 Pages) Motorola, Inc – POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE1320
DESCRIPTION
With TO-220 package
High voltage
Low collector saturation voltage
APPLICATIONS
For high-voltage ,power switching in
inductive circuits and line operated
switchmode applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_C=100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
1800
900
9
2
5
1.5
2.5
80
32
-65~150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.56
UNIT
/W