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| MJE13070 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,400-450V,80W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
MJE13070/13071
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)CEO
Collector-Emitter
Breakdown Voltage
MJE13070
MJE13071
IC= 0.1A ;IB=B 0
400
V
450
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
IC= 3A; IB=B 0.6A;TC=100â
1.0
2.0
V
VCE(sat)-2
VBE(sat)
ICEV
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC= 5A; IB=B 1A
IC= 3A; IB=B 0.6A
IC= 3A; IB=B 0.6A;TC=100â
VCEV=Rated Value;VBE(off)= 1.5V
VCEV=Rated Value;VBE(off)=1.5V;TC=100â
VEB= 6V; IC=0
3.0
V
1.5
1.5
V
0.5
2.5
mA
1.0 mA
hFE
DC Current Gain
IC= 3A ; VCE= 5V
8
COB
Output Capacitance
Switching Times
IE= 0; VCB= 10V, ftest= 1.0kHz
250 pF
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 3A; IB1= 0.4A;VBE(off)= 5V;
VCC= 250V; tp= 30μs,Duty Cycleâ¤1%
0.05 μs
0.4 μs
1.5 μs
0.5 μs
isc Websiteï¼www.iscsemi.cn
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