MJE13070 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,400-450V,80W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)- MJE13070
= 450V(Min)- MJE13071
· Collector-Emitter Saturation Voltage-
: V_CE(sat) = 3.0V(Min)@I_C= 5A
APPLICATIONS
·Designed for high-voltage, high-speed, power switching in
inductive circuits, where fall time is critical.They are partic-
ularly suited for line-operated switchmode applications su-
ch as switching regulators , inverters , DC-DC converter,
motor controls, solenoid drive and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEV
Collector-Emitter
Voltage
MJE13070
650
V
MJE13071
750
V_CEO
Collector-Emitter
Voltage
MJE13070
400
V
MJE13071
450
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2
A
80
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.56 ℃/W
isc Product Specification
MJE13070/13071
isc Website：www.iscsemi.cn