MJE13009 Datasheet, PDF (2/5 Pages) Motorola, Inc – 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS) Collector-emitter sustaining voltage I_C=10mA; I_B=0
V_CEsat-1
V_CEsat-2
V_CEsat-3
Collector-emitter saturation voltage I_C=5A; I_B=1A
Collector-emitter saturation voltage
I_C=8A ;I_B=1.6A
T_C=100
Collector-emitter saturation voltage I_C=12A; I_B=3A
V_BEsat-1 Base-emitter saturation voltage
V_BEsat-2 Base-emitter saturation voltage
I_CEV
Collector cut-off current
I_EBO
Emitter cut-off current
I_C=5A; I_B=1A
I_C=8A; I_B=1.6A
T_C=100
V_CEV=Rated value,
V_BE(off)=1.5V dc;T_C=100
V_EB=9V; I_C=0
h_FE-1
DC current gain
I_C=5A ; V_CE=5V
h_FE-2
f_T
C_OB
DC current gain
Transition frequency
Collector outoput capacitance
I_C=8A ; V_CE=5V
I_C=0.5A ; V_CE=10V;f=1MHz
I_E=0; f=0.1MHz ; V_CB=10V
Switching times resistive load
t_d
Delay time
t_r
Rise time
t_s
Storage time
t_f
Fall time
V_CC=125V ,I_C=8A
I_B1=-I_B2=1.6A
t_p=25 s
duty cycle 1%
Product Specification
MJE13009
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
2.0
V
3.0
V
1.2
V
1.6
1.5
V
1.0
5.0
mA
1.0 mA
8
40
6
30
4
MHz
180
pF
0.06 0.1
s
0.45 1.0
s
1.30 3.0
s
0.20 0.7
s
2