MJE13009 Datasheet, PDF (1/5 Pages) Motorola, Inc – 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13009
DESCRIPTION
With TO-220C package
High voltage ,high speed
APPLICATIONS
Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_E
Emitter current
I_EM
Emitter current-Peak
I_B
Base current
I_BM
Base current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
VALUE
700
400
9
12
24
18
36
6
12
2
100
150
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
VALUE
1.25
UNIT
/W