MJD127 Datasheet, PDF (2/2 Pages) Samsung semiconductor – PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
MJD127
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(ON)
Base-Emitter voltage
ICEO
Collector Cutoff Current
IC=-4A; IB= -16mA
IC=-8A; IB= -80mA
IC=-8A; IB= -80mA
IC= -4A; VCE= -4V
VCE=-50V; IE= 0
IEBO
Emitter Cutoff Current
VEB=-5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= -4A; VCE=- 4V
IC=-8A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IC=-3A; VCE=- 4V
COB
Output Capacitance
IE=0;
VCB= -10V; f= 1.0MHz
MIN
TYP MAX UNIT
-100
V
-2.0
V
-4.0
V
-4.5
V
-2.8
V
-10
uA
-2
mA
1000
100
12000
4
MHz
300
pF
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