MJD127 Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
MJD127
DESCRIPTION
·Low Collector-Emitter saturation voltage
·Lead formed for surface mount applications
·High DC current gain
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
PC
PC
Rth j-a
Total Power Dissipation
@ Ta=25℃
Collector Power Dissipation
TC=25℃
Thermal Resistance,Junction to
Ambient
1.75
20
71.4
TJ
Junction Temperature
150
A
W
W
℃/W
℃
Tstg
Storage Temperature Range
-55~150 ℃
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