MJB45H11 Datasheet, PDF (2/2 Pages) ON Semiconductor – Complementary Power Transistors

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJB45H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0
VCE(sat)
VBE(sat)
ICEO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC=-8A; IB=- 400mA
IC=-8A; IB= -800mA
VCE= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= -2A; VCE=-1V
IC=-4A; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -10V
COB
Output Capacitance
IE=0;
VCB= -10V; f= 1.0MHz
MIN
TYP MAX UNIT
-80
V
-1.0
V
-1.5
V
-10
uA
-50
uA
60
40
40
MHz
230
pF
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