MJB45H11 Datasheet, PDF (1/2 Pages) ON Semiconductor – Complementary Power Transistors

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJB45H11
DESCRIPTION
·Low Collector-Emitter saturation voltage
·Pb-free package are available
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·General purpose amplification and switching such as
out or driver stages in applications such as switching
regulators,converters and power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICP
Collector Current-Pulse
PC
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-20
A
2
W
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}