MJ431 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – 10 Amp NPN Silicon Power Transistors 125W

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ431
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2.5A; IB= 0.5A
VCB=400V; IE= 0
VCB=400V; IE= 0;TC=125℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
fT
Current Gain-Bandwidth Product
IC= 0.2A ;VCE= 10V; ftest=1MHz
MIN TYP. MAX UNIT
325
V
0.7
V
1.5
V
2.5
5.0
mA
2.0 mA
15
35
10
2.5
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