MJ431 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – 10 Amp NPN Silicon Power Transistors 125W

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ431
DESCRIPTION
·Collector-Emitter Voltage-
: VCEX = 400V(Min)
·DC Current Gain-
: hFE= 15-35@ IC= 2.5A
APPLICATIONS
·Designed for medium-to-high-voltage inverters, converters,
regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark