MJ1800 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
MJ1800
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCBO
Collector Cutoff Current
IC= 1mA ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 5V
hFE-2
DC Current Gain
IC= 0.4A; VCE= 5V
hFE-1/ hFE-2 Gain Linearity
/
MIN TYP. MAX UNIT
250
V
500
V
0.1 mA
35
40
120
0.95
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