MJ1800 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ1800
DESCRIPTION
·High Collector-Emitter Voltage
·Good Linearity of hFE
APPLICATIONS
·Designed for use in vertical deflection amplifier circuits in
television receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
250
V
VCBO
Collector- Base Voltage
500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃ 100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc website：www.iscsemi.com
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