KSH350 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – High Voltage Power Transistors D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH350
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
ICBO
Collector Cutoff Current
VCB= -300V; IE= 0
IEBO
Emitter Cutoff Current
VEB=-3V; IC= 0
hFE1*
DC Current Gain
*:Pulse test PW≤300us,duty cycle≤2%
IC=- 50mA; VCE= -10V
MIN
TYP MAX UNIT
-300
V
-100
uA
-100
uA
30
240
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