|
KSH350 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – High Voltage Power Transistors D-PAK for Surface Mount Applications | |||
|
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH350
DESCRIPTION
·Lead formed for surface mount applications(NO suffix)
·Straight lead(IPAK,âï¼Iâsuffix)
·DPAK for surface mount applications
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High voltage power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-300
V
VCEO Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-3
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
-0.5
A
1.56
W
15
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
|
▷ |