KSH200 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH200
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage
VCE(sat)-2* Collector-Emitter Saturation Voltage
VCE(sat)-3* Collector-Emitter Saturation Voltage
VBE(sat)* Base-Emitter Saturation Voltage
VBE(on)*
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= 0.5A; IB= 50mA
IC= 2.0A; IB= 200mA
IC= 5A; IB= 1A
IC= 5A; IB= 1A
IC= 2A; VCE=1V
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE1*
hFE2*
hFE3*
DC Current Gain
DC Current Gain
DC Current Gain
IC= 0.5A; VCE= 1V
IC= 2A; VCE= 1V
IC= 5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
Cob
Collector output capacitance
*:Pulse test PW≤300us,duty cycle≤2%
VCB=10V ,IE=0,f=1MHz
MIN
TYP MAX UNIT
25
V
0.3
V
0.75
V
1.8
V
2.5
V
1.6
V
100
nA
100
nA
70
45
180
10
65
MHz
80
pF
isc website：www.iscsemi.com
2 _{isc & iscsemi is registered trademark}