KSH200 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH200
DESCRIPTION
·High DC current gain
·Built-in a damper diode at E-C
·Lead formed for surface mount applications(NO suffix)
·Straight lead(IPAK,“－I”suffix)
·DPAK for surface mount applications
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
40
V
VCEO Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
5
A
1.4
W
12.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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