KSH117 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH117
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=- 4A; IB=- 40mA
VBE(on)* Base-Emitter On Voltage
IC=-2A; VCE=-3V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
ICBO
Collector Cutoff Current
VCB=- 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC=-0.5A; VCE= -3V
hFE-2*
DC Current Gain
IC= -2A; VCE=-3V
hFE-3*
DC Current Gain
IC=- 4A; VCE=-3V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= -0.75A; VCE= -10V
MIN TYP. MAX UNIT
-2.0 V
-3.0 V
-4.0 V
-2.8 V
-100
V
-20 uA
-2 mA
500
1K
12K
200
100
pF
25
MHz
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