KSH117 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH117
DESCRIPTION
·High DC current gain
·Built-in a damper diode at E-C
·Electrically similar to popular TIP117
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
Ta=25℃
PC
Collector Power Dissipation
TC=25℃
TJ
Junction Temperature
-4
A
1.75
W
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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