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| KSD986 Datasheet, PDF (2/2 Pages) Samsung semiconductor – NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KSD986
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
ICER
Collector Cutoff Current
VCE=60V;RBE=51Ω;TC=125â
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 60V; VBE(off)= -1.5A
VCE= 60V; VBE(off)= -1.5A
TC=125â
VEB= 5V; IC= 0
1.5
V
2.0
V
10
μA
1.0
mA
10
μA
1.0
mA
2.0
mA
hFE-1
DC Current Gain
hFE-2
DC Current Gain
Switching Times
IC= 0.5A; VCE= 2V
IC= 1A; VCE= 2V
1000
2000
30000
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC=1.0A; IB1=-IB2=1.0mA
VCC=50V; RL=50Ω
0.5
μs
1.0
μs
1.0
μs
 hFE-2 Classifications
R
O
Y
2000-5000 4000-10000 8000-30000
isc websiteï¼www.iscsemi.cn
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