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| KSD986 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KSD986
DESCRIPTION
·CollectorâEmitter Breakdown Voltage-
: V(BR)CEO = 80V(Min.)
·DC Current Gain-
: hFE = 2000(Min) @ IC= 1A
·Low Collector Saturation Voltage
APPLICATIONS
·They are suitable for use to operate from IC without
predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Pulse
80
V
8
V
1.5
A
3.0
A
IB
Base Current
Collector Power Dissipation
Ta=25â
PC
Collector Power Dissipation
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
0.15
A
1.0
W
10
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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