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| KSD526 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Power Amplifier Applications | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD526
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-GainâBandwidth Product
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
80
V
5
V
1.5
V
1.5
V
30 μA
0.1 mA
40
240
15
90
pF
8
MHz
 hFE-1 Classifications
R
O
Y
40-80 70-140 120-240
isc websiteï¼www.iscsemi.cn
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