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| KSD526 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Power Amplifier Applications | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD526
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25â
·Complement to Type KSB596
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 20~25W high fidelity audio frequency
amplifier output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.4
A
30
W
150
â
-55~150
â
isc websiteï¼www.iscsemi.cn
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