ISH6N70 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
ISH6N70
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-voltage
IS= 6A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 3.0A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=700V; VGS= 0
MIN TYPE MAX UNIT
700
V
2.0
4.0
V
1.4
V
1.8
Ω
±100 nA
25
µA
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