ISH6N70 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
ISH6N70
·FEATURES
·Static Drain-Source On-Resistance
: RDS(on) = 1.8Ω(Max)
·Low gate charge
·High switching speed
·Low input capacitance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·The ISH6N70 is universally applied in high efficiency switch
mode power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
6
A
IDM
Drain Current-Single Plused
24
A
PD
Total Dissipation @TC=25℃
55
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.27 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 110 ℃/W
isc website：www.iscsemi.com
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