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| IRFS250A Datasheet, PDF (2/2 Pages) International Rectifier – Advanced Power MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS250A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=10.65A
VGS= ±30V;VDS= 0
VDS= 200V; VGS= 0
VDS= 160V; VGS= 0; Tj= 125â
IS= 21.3A; VGS= 0
MIN MAX UNIT
400
V
2
4
V
0.085
Ω
±100
nA
10
100
μA
1.5
V
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