IRFS250A Datasheet, PDF (1/2 Pages) International Rectifier – Advanced Power MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS250A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±30
V
I_D
Drain Current-Continuous
21.3
A
I_DM
Drain Current-Single Pluse
130
A
P_D
Total Dissipation @T_C=25℃
90
W
T_J
Max. Operating Junction Temperature
-55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.38
40
UNIT
℃/W
℃/W
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