IRFB4310 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFB4310
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO
L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS_(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(_on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 75A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS= 100V; VGS= 0
VSD Forward On-Voltage
IS= 75A; VGS=0
Gfs Forward Transconductance
VDS= 50V；ID= 75A
MIN
TYPE MAX UNIT
100
V
2
4
V
0.007 Ω
±200 nA
20
μA
1.3
V
160
S
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