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IRFB4310 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFB4310
FEATURES
·Drain Current âID= 140A@ TC=25â
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.007Ω(Max)
Applications
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±20
V
ID
Drain Current-Continuous
140
A
IDM
Drain Current-Single Pluse
550
A
PD
Total Dissipation @TC=25â
330
W
TJ
Max. Operating Junction Temperature
175
â
Tstg
Storage Temperature
-55~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.45 â/W
62 â/W
isc websiteï¼ www.iscsemi.com
1 isc & iscsemi is registered trademark
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