IRF822 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF822
ELECTRICAL CHARACTERISTICS
T_C=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)DSS Drain-Source Breakdown Voltage
V_GS= 0; I_D= 0.25mA
V_GS(th) Gate Threshold Voltage
R_DS(on) Drain-Source On-Resistance
I_GSS
Gate-Body Leakage Current
V_DS= V_GS; I_D= 0.25mA
V_GS= 10V; I_D=1.4A
V_GS= ±20V;V_DS= 0
I_DSS
Zero Gate Voltage Drain Current
V_DS= 500V; V_GS= 0
V_SD
Forward On-Voltage
I_S= 2.5A; V_GS= 0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
V_DS=25V,V_GS=0V,
F=1.0MHz
MIN MAX UNIT
500
V
2
4
V
4
Ω
±500
nA
250
μA
1.6
V
510
pF
60
pF
26
pF
·SWITCHING CHARACTERISTICS (T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
V_DD=250V,I_D=2.5A
R_G=18Ω
Tf
·
Fall Time
MIN
TYP MAX UNIT
11
15
ns
11
18
ns
29
42
ns
12
18
ns
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