IRF822 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF822
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
V
±20
V
I_D
Drain Current-Continuous
2.0
A
I_DM
Drain Current-Single Pluse
7
A
P_D
Total Dissipation @T_C=25℃
50
W
T_J
Max. Operating Junction Temperature
-55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.5
80
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
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