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| IRF820 Datasheet, PDF (2/2 Pages) Motorola, Inc – N-CHANNEL Enhancement-Mode Silicon Gate TMOS | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF820
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Diode Forward Voltage
IF= 2.5A; VGS= 0
MIN MAX UNIT
500
V
2
4
V
3
Ω
±100 nA
1
uA
1.6
V
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