IRF820 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL Enhancement-Mode Silicon Gate TMOS

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF820
DESCRIPTION
·Drain Current –I_D= 2.5A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 500V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 3Ω(Max)
·Fast Switching Speed
·Simple Drive Requirements
APPLICATIONS
·High current,high speed switching
· Swith mode power supplies(smps)
·DC-AC converters for welding equipmentand uninterruptible power
supplies and motor driver
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_D
T_j
T_stg
Drain-Source Voltage (V_GS=0)
500
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ T_C=25℃
2.5
A
Power Dissipation@T_C=25℃
80
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.56
62.5
℃/W
℃/W
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