IRF730B Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF730B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=2.75A
IGSS
Gate Source Leakage Current
VGS= ±30V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD
Diode Forward Voltage
IF= 5.5A; VGS= 0
MIN MAX UNIT
400
V
2
4
V
1.0
Ω
±100 nA
10
uA
1.5
V
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