IRF730B Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF730B
DESCRIPTION
·Drain Current –ID=5.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 400V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5.5
A
Ptot
Total Dissipation@TC=25℃
73
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.71 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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