IRF654A Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Advanced Power MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF654A
ELECTRICAL CHARACTERISTICS
T_C=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)DSS Drain-Source Breakdown Voltage
V_GS= 0; I_D= 0.25mA
V_GS(th) Gate Threshold Voltage
R_DS(on) Drain-Source On-Resistance
I_GSS
Gate-Body Leakage Current
V_DS= V_GS; I_D= 0.25mA
V_GS= 10V; I_D= 10.5 A
V_GS= ±30V;V_DS= 0
I_DSS
Zero Gate Voltage Drain Current
V_DS= 250V; V_GS=0
V_SD
Forward On-Voltage
I_S= 21A; V_GS=0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
V_DS=25V,V_GS=0V,
F=1.0MHz
MIN MAX UNIT
250
V
2
4
V
0.14
Ω
±100
nA
10
uA
1.5
V
3000
pF
400
pF
180
pF
·SWITCHING CHARACTERISTICS (T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
V_DD=125V,I_D=25A
R_G=5.3Ω
Tf
Fall Time
MIN
TYP MAX UNIT
21
60
ns
20
60
ns
86
190
ns
40
100
ns
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