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| IRF654A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF654A
·FEATURES
·Avalanche Rugged Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Low RDS(ON) : 0.108 Ω (Typ.)
·DESCRITION
·designed for applications such as switching regulators,
switching convertors, motor drivers,relay drivers, and
drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
ID
IDM
PD
Tj
Tstg
Drain-Source Voltage
250
V
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous
21
A
Drain Current-Single Plused
84
A
Total Dissipation @TC=25â
156
W
Max. Operating Junction Temperature -55~150 â
Storage Temperature
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
RθJA
Thermal Resistance,Junction to Case
Junction-to-Ambient
MAX UNIT
0.8
â/W
62.5 â/W
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