 English |
|
|
|
|
|
|
|
| IRF640 Datasheet, PDF (2/2 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF640
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 10A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
VSD
Diode Forward Voltage
IF= 18A; VGS=0
MIN MAX UNIT
200
V
2
4
V
0.18
â¦
±100 nA
200
uA
2.0
V
isc Websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese