IRF640 Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF640
DESCRIPTION
·Drain Current –I_D= 18A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 200V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.18Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
Drain-Source Voltage (V_GS=0)
200
V
V_GS
Gate-Source Voltage
±20
V
I_D
Drain Current-continuous@ TC=25℃
18
A
P_tot
Total Dissipation@TC=25℃
125
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.0
62.5
℃/W
℃/W
isc Website：www.iscsemi.cn