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| IRF630N Datasheet, PDF (2/2 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF630N
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.4A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS=0
VSD
Diode Forward Voltage
IF= 5.4A; VGS=0
MIN MAX UNIT
200
V
2
4
V
0.3
Ω
±100 nA
25
uA
1.3
V
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