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| IRF630N Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF630N
DESCRIPTION
·Drain Current âID=9.3A@ TC=25â
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·This device is n-channel, enhancement mode, power MOSFET
designed especially for high power, high speed applications,
such as switching power supplies,UPS, AC and DC motor con-
trols, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25â
9.3
A
PD
Total Dissipation@TC=25â
82
W
Tj
Max. Operating Junction Temperature
175
â
Tstg
Storage Temperature Range
-55~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.83
62
â/W
â/W
isc Websiteï¼www.iscsemi.cn
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