 English |
|
|
|
|
|
|
|
| IRF626 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-Source
Voltage
Breakdown VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 1.4A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS= 275V; VGS=0
VSD
Forward On-Voltage
IS= 3.8A; VGS=0
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
Crss Reverse Transfer Capacitance
·SWITCHING CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=125V,ID=3.8A
RG=18Ω
Tf
Fall Time
isc Product Specification
IRF626
MIN TYP
MAX UNIT
275
V
2
4
V
1.1
Ω
±500 nA
250
uA
1.8
V
340
pF
110
pF
32
pF
MIN
TYP MAX UNIT
11
17
ns
24
36
ns
21
32
ns
13
20
ns
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese