IRF626 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·R_DS(on) =1.1Ω
·3.8A and 275V
·single pulse avalanche energy rated
·SOA is Power- Dissipation Limited
·Linear Transfer Characteristics
·High Input Impedance
isc Product Specification
IRF626
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
275
V
±20
V
I_D
Drain Current-Continuous
3.8
A
I_DM
Drain Current-Single Plused
15
A
P_D
Total Dissipation @T_C=25℃
40
W
T_j
Max. Operating Junction Temperature -55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.12
80
℃/W
℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
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