FIR4N65F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
FIR4N65F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0
VSD
Forward On-Voltage
IS= 4A; VGS= 0
MIN MAX UNIT
650
V
2
4
V
3.0
Ω
±100 nA
10
μA
1.4
V
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