FIR4N65F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
FIR4N65F
·FEATURES
·Drain Current –ID= 4A@ TC=25℃
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 3.0Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Plused
16
A
PD
Total Dissipation @TC=25℃
106
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.18 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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