ESJA54-08 Datasheet, PDF (2/2 Pages) American Microsemiconductor – High Voltage Silicon Diode ESJA SERIES

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2690
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 200mA
VBE(sat) Base-Emitter Saturation Voltage
IC=1A; IB= 200mA
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.3A ; VCE= 5V
MIN TYP. MAX UNIT
0.7
V
1.3
V
1
μA
1
μA
35
60
320
 hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
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